发明名称 |
Mask-less and implant free formation of complementary tunnel field effect transistors |
摘要 |
A device includes a first source/drain region of a first conductivity type over a silicon substrate, wherein the first source/drain region is at a higher step of a two-step profile. The first source/drain region includes a germanium-containing region. A second source/drain region is of a second conductivity type opposite the first conductivity type, wherein the second source/drain region is at a lower step of the two-step profile. A gate dielectric includes a vertical portion in contact with a side edge the silicon substrate, and a horizontal portion in contact with a top surface of the silicon substrate at the lower step. The horizontal portion is connected to a lower end of the vertical portion. A gate electrode is directly over the horizontal portion, wherein a sidewall of the gate electrode is in contact with the vertical portion of the gate dielectric. |
申请公布号 |
US8614468(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US201113162316 |
申请日期 |
2011.06.16 |
申请人 |
VAN DAL MARK;BHUWALKA KRISHNA KUMAR;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
VAN DAL MARK;BHUWALKA KRISHNA KUMAR |
分类号 |
H01L29/70;H01L29/66 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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