发明名称 |
Crystalline silicon-based memristive device with multiple mobile dopant species |
摘要 |
A memristive device includes a first and a second electrode; a silicon memristive matrix interposed between the first electrode and the second electrode; and a mobile dopant species within the silicon memristive matrix which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture containing a silicon memristive matrix includes: applying a programming electrical field by applying a voltage bias across a first conductor and a second conductor; a silicon memristive matrix containing mobile dopants being interposed between the first conductor and the second conductor, the programming voltage repositioning the mobile dopants within the silicon memristive matrix; and reading a state of the silicon memristive matrix by applying a reading energy across the silicon memristive matrix, the reading energy producing a measurable indication of the state of the silicon memristive matrix. |
申请公布号 |
US8614432(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US200913139557 |
申请日期 |
2009.01.15 |
申请人 |
PICKETT MATTHEW D;STEWART DUNCAN;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
PICKETT MATTHEW D;STEWART DUNCAN |
分类号 |
H01L47/00 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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