HETEROJUNCTION SOLAR CELL AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a method for manufacturing a heterojunction solar cell, which includes the steps of: providing an N-type silicon substrate; manufacturing a P-type zinc oxide layer on the upper side of the N-type silicon substrate with an in-situ P-type doping method to inject a V group dopant to the zinc oxide layer formed on the N-type silicon substrate while performing a thermal process after the zinc oxide layer is deposited on the upper side of the N-type silicon substrate; and forming a PN junction between the N-type silicon substrate and the P-type zinc oxide layer. [Reference numerals] (1) N-type silicon substrate;(2) P-type zinc oxide layer;(3) Insulator film