Semiconductor memory device having a redundancy area

摘要

Provided is a semiconductor memory device. The semiconductor memory includes a main area and a redundancy area. The main area includes a plurality of memory blocks sharing a write bit line and a read bit line. The redundancy area includes a plurality of redundancy memory blocks sharing a redundancy write bit line and a redundancy read bit line. The redundancy area is provided to replace a component in the main area having a defect.