发明名称 |
Method of manufacturing back gate triggered silicon controlled rectifiers |
摘要 |
Back gate triggered silicon controlled rectifiers (SCR) and methods of manufacture are disclosed. The method includes forming a first diffusion type and a second diffusion type in a semiconductor layer of a silicon on insulator (SOI) substrate. The method further includes forming a back gate of a first diffusion type in a substrate under an insulator layer of the SOI substrate. The method further includes forming raised diffusion regions of a first dopant type and a second dopant type, adjacent to the second diffusion type and the first diffusion type, respectively. The back gate is formed to cover the second diffusion type, the first diffusion type and the second dopant type of the raised diffusion regions. |
申请公布号 |
US8614121(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US201113306488 |
申请日期 |
2011.11.29 |
申请人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAUTHIER, JR. ROBERT J.;LI JUNJUN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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