| 摘要 |
A laser diode is configured with a substrate delimited by opposite AR and HR reflectors and a gain region. The gain region bridges the portions of the respective AR and HR reflectors and is configured with a main resonant cavity and at least one side resonant cavity. The main resonant cavity spans between the portions of the respective reflectors, and at least one additional resonant cavity extends adjacent to the main resonator cavity. The gain region is configured so that stimulated emission is generated only in the main resonant cavity. Accordingly, the laser diode is operative to radiate a high-power output beam emitted through the portion of the AR reflector which is dimensioned to shape the output beam with the desired near-field. |
