发明名称 Semiconductor devices and methods of manufacturing the same
摘要 A memory device includes a lower interconnection in a semiconductor substrate, the lower interconnection being made of a material different from the semiconductor substrate, a selection element on the lower interconnection, and a memory element on the selection element.
申请公布号 US8614433(B2) 申请公布日期 2013.12.24
申请号 US201213463244 申请日期 2012.05.03
申请人 LEE JAEKYU;SUH KISEOK;YOON TAE EUNG;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAEKYU;SUH KISEOK;YOON TAE EUNG
分类号 H01L45/00 主分类号 H01L45/00
代理机构 代理人
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