发明名称 |
Self-aligned static random access memory (SRAM) on metal gate |
摘要 |
A method for fabricating an integrated circuit providing an enlarged contact process window while reducing device size is disclosed. The method comprises providing a substrate including a first region and a second region, the first and second regions having one or more gate structures including a dummy gate layer; removing the dummy gate layer from at least one of the one or more gate structures in the first and second regions to form one or more trenches in the first and second regions; filling the one or more trenches in the first and second regions with a conductive layer; selectively etching back the conductive layer of the one or more gate structures in the second region of the substrate; forming a protective layer over the etched back conductive layer of the one or more gate structures in the second region; and forming one or more contact openings in the first and second regions. |
申请公布号 |
US8614131(B2) |
申请公布日期 |
2013.12.24 |
申请号 |
US20090364701 |
申请日期 |
2009.02.03 |
申请人 |
TU AN-CHUN;HUANG CHEN-MING;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TU AN-CHUN;HUANG CHEN-MING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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