THIN FILM TRANSISTOR ARRAY PANEL

摘要

A thin film transistor according to one embodiment of the present invention includes a semiconductor layer which is arranged on an insulation substrate; a gate electrode which overlaps the semiconductor layer, source and drain electrodes which overlaps the semiconductor layer; a first barrier layer which is arranged between the source electrode and the semiconductor layer; and a second barrier layer which is arranged between the drain electrode and the semiconductor layer. The first barrier layer and the second barrier layer includes NiCr.