发明名称 METHOD FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM
摘要 The present invention provides a method for forming silicon-containing resist underlayer film capable of reducing coating defect by cleansing precipitate from a Si-containing resist lower layer material in a coating formation device. The present invention, in the method for forming silicon-containing resist underlayer film, after the pipe of the coating formation device is cleaned by using alkali solution, the a Si-containing resist lower layer material is supplied through the pipe. Therefore, a layer is formed by coating the Si-containing resist lower layer material on a substrate.
申请公布号 KR20130139775(A) 申请公布日期 2013.12.23
申请号 KR20130066465 申请日期 2013.06.11
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 YOSHIHARA TAKAO;OGIHARA TSUTOMU;IWABUCHI MOTOAKI
分类号 H01L21/027 主分类号 H01L21/027
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