发明名称 |
PLASMA TREATMENT APPARATUS, PLASMA GENERATION APPARATUS, ANTENNA STRUCTURE AND PLASMA GENERATION METHOD |
摘要 |
A plasma treatment apparatus is provided, which is capable of simplifying the configuration thereof and preventing the deterioration of plasma generation efficiency. The plasma treatment apparatus (10) comprises: a chamber (11); a mount (12) arranged inside the chamber (11) to mount a substrate (S); an ICP antenna (13) arranged to be opposite to the mount (12) outside the chamber (11) and connected to a high-frequency power source (26); and a window member (14) interposed between the mount (12) and the ICP antenna (13) and made up of a conductor, wherein the window member (14) is divided into a plurality of segments (27) and the segments (27) are insulated from each other and connected to a wire (29) or a wire (30) having a condenser attached thereto to form a closed circuit (31). |
申请公布号 |
KR20130139779(A) |
申请公布日期 |
2013.12.23 |
申请号 |
KR20130066588 |
申请日期 |
2013.06.11 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAMAZAWA YOHEI;DENPOH KAZUKI;KIMURA TAKAFUMI;KOSHIMIZU CHISHIO;SASAKI KAZUO;NAITO HAJIME;FURUYA ATSUKI |
分类号 |
H05H1/46;H01L21/205;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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