发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
The present invention relates to a semiconductor light-emitting device capable of improving the device's light extraction rate by forming a p-type semiconductor layer with multiple nano structures using a transparent electrode with a micro opening unit and a method of manufacturing the same. Also, the present invention relates to a semiconductor light-emitting device capable of improving the device's light extraction rate by forming a p-type semiconductor layer and a n-type semiconductor layer with multiple nano structures using a transparent electrode with a micro opening unit and a method of manufacturing the same. |
申请公布号 |
KR20130138941(A) |
申请公布日期 |
2013.12.20 |
申请号 |
KR20120062492 |
申请日期 |
2012.06.12 |
申请人 |
INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY |
发明人 |
KWAK, JOON SEOP;PARK, MIN JOO;SON, KWANG JEUNG |
分类号 |
H01L33/22;H01L33/36 |
主分类号 |
H01L33/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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