| 摘要 |
<p>The device has a porous substrate (1) and a filling layer (3) that are made of n-type transparent semiconductor compound or p-type transparent semiconductor compound. An absorption layer (2) is formed between the substrate and the filling layer and made of absorbent compound such as antimony and tin sulfide based antimony and tin compound. The substrate comprises pores (1-1) having a size of about 10-100 nanometer, and nanocrystals (1-2) having a mean size of about 30-50 nanometer.</p> |
