NITRIDE-BASED HETEROJUCTION SEMICONDUCTOR DEVICE AND METHOD FOR THE SAME

摘要

The present invention relates to a semiconductor device, especially to a nitride-based heterojuction semiconductor device and a method for manufacturing the same. The present invention includes a nitride semiconductor buffer layer; a barrier layer located on the buffer layer; a cap layer located on the barrier layer; a source electrode and a drain electrode located on the cap layer; a dielectric layer including gallium located between the source electrode and the drain electrode on the cap layer; and a gate electrode located between the source electrode and the drain electrode on the cap layer.