| 摘要 |
FIELD: physics.SUBSTANCE: method of making a light-emitting device according to the invention comprises the following steps: providing a light-emitting diode (LED) chip on a support (22), with a gap between the LED chip and the support, wherein the LED chip has a bottom surface facing the support and a top surface opposite the bottom surface; forming spacer material (54) on top of the LED chip such that the spacer material seals the LED chip and substantially completely fills the gap between the LED chip and the support, and removing the spacer material (54) at least from the top surface of the LED chip. The LED chip has epitaxial layers (10) that are grown on a growth substrate, wherein the surface of the growth substrate is the top surface of the LED chip. The method further includes a step of removing the growth substrate from the epitaxial layers after forming the spacer material (54) on top of the LED chip. Also disclosed is an intermediate method of making a light-emitting device, a light-emitting device before singulation, a light-emitting device having a flip chip.EFFECT: using the invention to process on the wafer level multiple LEDs at the same time considerably shortens manufacturing time and enables to use a wide range of materials for the spacer since it allows for a wider range of viscosity.16 cl, 7 dwg |
