| 摘要 |
The light emitting device of the embodiment includes a light emitting structure including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer; a first electrode layer touching the second conductivity type semiconductor layer; a second electrode layer touching the first conductivity type semiconductor layer and penetrating the first electrode layer, a second conductivity type semiconductor layer, and an active layer; a reflective layer where the first electrode layer touches the second conductivity type semiconductor layer under the light emitting structure, and includes an insulating layer between the second conductivity type semiconductor layer and the active layer, the first electrode layer and the second conductivity type semiconductor layer, and the first electrode layer and the second electrode layer; and a spread layer arranged under the reflective layer and surrounding the side of the reflective layer. |
