SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

The present invention relates to a semiconductor light emitting device and a method for manufacturing the same. According to the present invention, the semiconductor light emitting device includes a GaN-based semiconductor lamination structure; a p-type electrode and an n-type electrode; and a surface reforming layer. The surface reforming layer is formed on the surface exposed to a p-type semiconductor layer, an active layer and an n-type semiconductor layer by an ion injection or a plasma doping method. Therefore, a leakage phenomenon is prevented.