PLASMA PROCESSING APPARATUS AND METHOD

摘要

The present invention improves the uniformity of processing by improving the processing feature of an edge/exclusion area. The present invention relates to a plasma processing device capable of processing samples by generating plasma inside a vacuum vessel in which processing gas is supplied and compressed at predetermined pressure and by applying a high frequency bias to the samples. The plasma processing device arranges a conductive high frequency ring (117), to which high frequency bias power applied to a sample stand (111) is applied, in a stepped unit which surrounds a block unit of the sample stand (111) and is formed on the outside of the block unit. A cover ring (118) made of a dielectric material is installed in the stepped unit and covers the high frequency ring (117). The cover ring (118) prevents the high frequency power from the high frequency ring (117) from penetrating the plasma. The upper side of the high frequency ring (117) is higher than the upper part of a wafer arranged on the sample stand (111).