GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a gallium nitride-based semiconductor capable of reducing a wafer's breakage and deformation with a decrease bow of the wafer and improving the uniformness of the outgoing wavelength and a method for manufacturing the same. The semiconductor device according to an embodiment of the present invention may include a silicon-based substrate doped with B and Ge simultaneously; a buffer layer on the silicon-based substrate; and a nitride laminated member on the buffer layer. Here, the doping concentration of B is higher than 10^19/cm^3 while the doping concentration of Ge can be higher than 10^19/cm^3.