SEMICONDUCTOR DEVICE AND FABRICATED METHOD THEREOF

摘要

Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a first transistor, a second transistor, and a third transistor with the same conductivities. A stacking fault is not formed on the first transistor. The stacking fault is formed on the second transistor. A first concentration of a first channel implanting area of the first transistor is different from a third concentration of a third channel implanting area of the third transistor.