| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a CIGS sputtering target, in which it is possible to simplify the process and improve productivity while preventing rapid selenization of the raw material.SOLUTION: A method for manufacturing a CIGS sputtering target comprises: a heat treatment step for heating a mixture of raw materials Cu, In, Ga, and Se placed in a container, in a vacuum or an inert atmosphere to a heat treatment temperature equal to or higher than the melting point of Se and equal to or lower than the boiling point of Se and then holding the mixture at the heat treatment temperature; a crushing step for crushing the heat treatment product in the container and producing a crushed matter; and a sintering step for hot-pressing the crushed matter in a vacuum or an inert atmosphere. |
