SEMICONDUCTOR THIN FILM MANUFACTURING SYSTEM

摘要

The present invention relates to a semiconductor thin film manufacturing system. The semiconductor thin film manufacturing system of the present invention injects a gaseous source into a substrate and comprises: a main chamber in which a gaseous source is prepared therein so as to be injected into a substrate and the substrate passes through the inside thereof; a first sub-chamber for providing the substrate to the main chamber; a second sub-chamber for receiving the source-deposited substrate from the main chamber; and a heat-radiating gate prepared between the main chamber and the first sub-chamber or between the main chamber and the second sub-chamber so as to selectively open or close a path through which the substrate passes, and heating a surface facing the main chamber so as to prevent the solidification of the gaseous source. Therefore, according to the present invention, provided is a semiconductor thin film manufacturing system in which contamination of the substrate can be prevented and the inside of the main chamber can be maintained in the vacuum state by enabling the heat-radiating gate valve to heat the path of the main chamber so as to prevent the solidification of the gaseous source in the substrate-passing path inside the main chamber.