| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of improving operational reliability.SOLUTION: A semiconductor memory 1 comprises: a plurality of memory cells MT; selection transistors ST1 and ST2; a plurality of memory strings 18; first and second blocks BLK; word lines WL; and select gate lines SGD and SGS. In the plurality of memory strings 18, current passages of the plurality of memory cells MT are connected in series. When data are written in the first block BLK, a WL increment mode, the data are sequentially written in with respect to the memory cells MT in the memory strings 18 connected to first select gate lines SGD in a state that the first select gate lines SGD are selected. When the data are written in the second block BLK, a string increment mode, the data are sequentially written in with respect to the memory cells MT in the plurality of memory strings 18 in a state that first word lines WL are selected. |
