发明名称 PHASE CHANGE MEMORY WORD LINE DRIVER
摘要 A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
申请公布号 US2013336055(A1) 申请公布日期 2013.12.19
申请号 US201313973600 申请日期 2013.08.22
申请人 MOSAID TECHNOLOGIES INCORPORATED 发明人 PYEON HONG BEOM
分类号 G11C13/00 主分类号 G11C13/00
代理机构 代理人
主权项
地址