发明名称 OPTICAL SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, BASE SUBSTANCE TO BE USED FOR MANUFACTURING THE SAME AND REFLECTOR MOLDING
摘要 PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of suppressing sulphurization of Ag plating layer, a method for manufacturing the same, a base substance to be used for manufacturing the same, and a reflector molding.SOLUTION: An optical semiconductor device 1A comprises: a substrate 10 in which an Ag plating layer 14 is formed thereon; a blue LED 30 bonded to the Ag plating layer 14; a reflector 20 arranged on the substrate 10 in such a position that the reflector 20 surrounds the blue LED 30; and a transparent sealing resin 40 filled in the reflector 20 to seal the blue LED 30; and a clay film 50 covering the Ag plating layer 10. Because the Ag plating layer 14 is covered by the clay film 50, sulphurization of the Ag plating layer 14 can be suppressed. As a result, an illuminance reduction in the optical semiconductor device 1A due to blackening of the Ag plating layer, is substantially suppressed.
申请公布号 JP2013254825(A) 申请公布日期 2013.12.19
申请号 JP20120129046 申请日期 2012.06.06
申请人 HITACHI CHEMICAL CO LTD 发明人 TONAI TOMOKO;TAKANE NOBUAKI;YAMAURA ITARU;INADA MAKI;YOKOTA HIROSHI
分类号 H01L33/56;H01L33/60 主分类号 H01L33/56
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