| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern inspection method suitable for inspecting deviation of width, a formation position, and a film thickness of even with respect to a plurality of inspection patterns formed on the same base.SOLUTION: An actual measurement spectrum showing a relationship between a wavelength and reflectance is acquired based on rotary light by reflection from a monitor element including a plurality of inspection patterns. An approximate spectrum approximate to the actual measurement vector is acquired based on spectrum data prepared in advance. A fitting coefficient is calculated based on the difference between the approximate spectrum and the actual measurement spectrum. It is discriminated whether the fitting coefficient is not less than a threshold. For the monitor element where the fitting coefficient becomes not less than the threshold, the amount of deviation of design elements including width and positions of the plurality of inspection patterns for the approximate spectrum is calculated, and the width and positions of the plurality of inspection patterns are obtained based on the calculated amount of deviation. |
