| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical transistor which has resistance to wire breaking, is easy to wire, and allows for reduction in degradation of the fast response by decreasing parasitic capacitance.SOLUTION: A gate electrode 2 is U-shaped in section and formed only between the bottom of a rib 3 and a substrate 1, and on the sides of the rib 3. This allows the distance between the gate 2 and a top electrode layer 7 to be increased with respect to the part of the gate electrode 2 facing the top electrode layer 7, thus allowing for decrease in the parasitic capacitance therebetween. Also, the parasitic capacitance between the gate electrode 2 and a bottom electrode 6 can be substantially eliminated because gate electrode 2 is not facing the bottom electrode layer 6, thus resulting in a large current density and reduced degradation of the fast response. Further, the cross-sectional area of the gate 2 can be increased to prevent the line width from being too thin, thus allowing for reduction of the possibility of wire breaking, easy wiring, and easy formation of the elements. |
