发明名称 METHOD FOR FORMING ORGANIC SEMICONDUCTOR THIN FILM BY SELF-FORMING TWO-LAYER SEPARATION, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To form an organic semiconductor thin film with almost no influence of impurities arising therein from a low-purity organic semiconductor containing lots of impurities including a byproduct resulting from synthesis.SOLUTION: The method for forming an organic semiconductor thin film on an insulating polymer layer by spin-coating (i.e. self-forming two-layer separation) comprises: spin-coating a substrate with a liquid solution including a low-purity organic semiconductor and an insulating polymer. The organic semiconductor thin film formed in this way has an electric property equivalent to that of an organic semiconductor thin film formed by use of a high-purity organic semiconductor. Therefore, it is possible to produce an organic semiconductor device at low cost without a purification process of organic semiconductor.
申请公布号 JP2013254874(A) 申请公布日期 2013.12.19
申请号 JP20120130269 申请日期 2012.06.07
申请人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 TSUKAGOSHI KAZUHITO;LI YUN
分类号 H01L51/40;H01L21/208;H01L21/336;H01L29/786;H01L51/05 主分类号 H01L51/40
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