Semiconductor module i.e. power semiconductor module, has base plate comprising thickened portion whose maximum thickness is greater than average thickness of base plate, and circuit carrier soldered with thickened portion by solder

摘要

The module has a circuit carrier (2) equipped with one or multiple semiconductor chips (1) e.g. MOSFETS, and arranged on a top surface (41) of a base plate (4), which comprises average thickness. The base plate comprises a thickened portion (45) below the circuit carrier. Maximum thickness (D45) of the thickened portion is greater than the average thickness of the base plate. The circuit carrier is soldered with the thickened portion by a solder (3). The average thickness is within a range of 1 to 6 mm. The circuit carrier comprises a ceramic insulation carrier (20). The base plate is made of unitary material. An independent claim is also included for a method for manufacturing a semiconductor module.