METHODS FOR TEXTURING A SEMICONDUCTOR MATERIAL

摘要

A method for modifying the texture of a semiconductor material is provided. The method includes performing a first texture step comprising reactive ion etching to a first surface of semiconductor material. After the first texture step, the first surface of the semiconductor material has a random texture comprising a plurality of peaks and a plurality of valleys, and wherein at least fifty percent of the first surface has a peak-to-valley height of less than one micron and an average peak-to-peak distance of less than one micron. Additional texture steps comprising wet etch or RIE etching may be optionally applied.