SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor substrate capable of suppressing deterioration of carrier mobility resulting from surface unevenness on a surface of the semiconductor substrate by controlling a direction and width of an atomic level step/terrace on the surface of the semiconductor substrate, and to provide a semiconductor device.SOLUTION: A plurality of terraces is formed in a stepped shape according to atomic step substantially in the same direction on a surface of a semiconductor substrate. Further, a MOS transistor is formed by using the semiconductor substrate so that there is no step in a carrier running direction (a source-drain direction).