发明名称 |
METHOD FOR PREPARING MONOCLINIC GA2S3 CRYSTAL AND USE IN OPTICS THEREOF |
摘要 |
Provided is a method for preparing monoclinic Ga2S3, comprising: mixing Ga2O3, B, and S according to a mole ratio of 1:2:3, grinding the mixture, pressing the ground mixture to form a sheet, then sealing the sheet into a vacuum quartz tube, and heating the tube in accordance with a specific temperature curve to obtain the product of monoclinic Ga2S3 crystal. Also provided is a use of monoclinic Ga2S3 crystal as infrared wave band second-order nonlinear crystal material. |
申请公布号 |
WO2013185453(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
WO2012CN86248 |
申请日期 |
2012.12.10 |
申请人 |
FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES |
发明人 |
ZHANG, MINGJIAN;GUO, GUOCONG;ZENG, HUIYI;JIANG, XIAOMING;FAN, YUHANG;LIU, BINWEN |
分类号 |
C01G15/00;G02F1/355;G02F1/37 |
主分类号 |
C01G15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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