发明名称 METHOD FOR PREPARING MONOCLINIC GA2S3 CRYSTAL AND USE IN OPTICS THEREOF
摘要 Provided is a method for preparing monoclinic Ga2S3, comprising: mixing Ga2O3, B, and S according to a mole ratio of 1:2:3, grinding the mixture, pressing the ground mixture to form a sheet, then sealing the sheet into a vacuum quartz tube, and heating the tube in accordance with a specific temperature curve to obtain the product of monoclinic Ga2S3 crystal. Also provided is a use of monoclinic Ga2S3 crystal as infrared wave band second-order nonlinear crystal material.
申请公布号 WO2013185453(A1) 申请公布日期 2013.12.19
申请号 WO2012CN86248 申请日期 2012.12.10
申请人 FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES 发明人 ZHANG, MINGJIAN;GUO, GUOCONG;ZENG, HUIYI;JIANG, XIAOMING;FAN, YUHANG;LIU, BINWEN
分类号 C01G15/00;G02F1/355;G02F1/37 主分类号 C01G15/00
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