NON-VOLATILE LOGIC GATE ELEMENT

摘要

The present invention is configured as a non-volatile logic gate element, having as one storage structure a resistor network in which at least three or more non-volatile resistor elements are connected, comprising: a reference resistor network which is a reference resistor with which the storage structure manifests resilience, with respect to a resistance value of the resistor network which forms the storage structure; a write unit which, when storing data in the resistor network, alternatively rewrites a value of each non-volatile resistor element which forms the resistor network as either a maximum or a minimum which is associated with a read-out logic value; and a logic circuit structure which employs as the logic value of the storage structure a value which is obtained by a comparison of the resistor network resistance value and the reference resistor network resistance value.