发明名称 |
TRANSISTOR DEVICE WITH REDUCED GATE RESISTANCE |
摘要 |
A device with reduced gate resistance includes a gate structure having a first conductive portion and a second conductive portion formed in electrical contact with the first conductive portion and extending laterally beyond the first conductive portion. The gate structure is embedded in a dielectric material and has a gate dielectric on the first conductive portion. A channel layer is provided over the first conductive portion. Source and drain electrodes are formed on opposite end portions of a channel region of the channel layer. Methods for forming a device with reduced gate resistance are also provided. |
申请公布号 |
US2013337618(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313972290 |
申请日期 |
2013.08.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HAN SHU-JEN;VALDES GARCIA ALBERTO |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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