发明名称 Capacitor Structure
摘要 One or more embodiments relate to a semiconductor device, comprising: a substrate; and a plurality of first conductive vias, the first conductive vias electrically coupled together, each of the first conductive vias passing through the substrate; and a plurality of second conductive vias, the second conductive vias electrically coupled together, each of the second conductive vias passing through the substrate, the second conductive vias spacedly disposed from the first conductive vias.
申请公布号 US2013334660(A1) 申请公布日期 2013.12.19
申请号 US201313972961 申请日期 2013.08.22
申请人 INFINEON TECHNOLOGIES AG 发明人 HANKE ANDRE;NAGY OLIVER
分类号 H01L49/02 主分类号 H01L49/02
代理机构 代理人
主权项
地址