| 摘要 |
<p>In a plasma processing device of a first embodiment, a high frequency power supply switches the high frequency power ON and OFF and supplies the power to one electrode of an upper electrode and a lower electrode. A matching circuit and a power supply line are provided between the high-frequency power supply and the one electrode. A probe detector measures electrical characteristics in the power supply line and generates a measurement signal. A processing unit of a probe device samples the measurement signal and generates sample values. A processing unit receives a pulse signal corresponding to the ON and OFF switching of the high frequency power, carries out sampling of the measurement signal at a prescribed sampling interval after the passage of a prescribed mask period from the rise timing for the pulse signal up until the fall timing of the pulse signal, and generates one or more sample values. One or more sample values obtained by final one or more samplings for the fall timing of the one or more sampling values is used as a detection value.</p> |
