发明名称 ARCHITECTURE FOR 3-D NAND MEMORY
摘要 <p>Apparatuses are described that include stacked arrays of memory cell strings and their methods of operation. Apparatuses include architectures that reduce the use of several common components, allowing greater device density and smaller device size for a given semiconductor area.</p>
申请公布号 WO2013188399(A1) 申请公布日期 2013.12.19
申请号 WO2013US45173 申请日期 2013.06.11
申请人 MICRON TECHNOLOGY, INC. 发明人 MOROOKA, MIDORI;TANAKA, TOMOHARU
分类号 G11C5/02;G11C16/00 主分类号 G11C5/02
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