发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent a surface of a substrate from being contaminated when drying treatment of the substrate is performed in a supercritical state or a subcritical state and thereby improve the yield of a substrate processing apparatus.SOLUTION: This invention includes: a processing container which perform processing to substrates; a fluid supply source which supplies a substrate processing fluid used for the substrate processing at a predetermined pressure; a constant pressure supply passage which supplies the substrate processing fluid from the fluid supply source to the processing container at a constant pressure without pressurizing the substrate processing fluid; a pressurizing supply passage which supplies the substrate processing fluid from the fluid supply source to the processing container after the substrate processing fluid is pressurized to a predetermined pressure by a pressurizing mechanism; and control means switching between the constant pressure supply passage and the pressurizing supply passage. The control means performs control so that the pressurized substrate processing fluid is supplied from the pressurizing supply passage to the processing container to increase the internal pressure of the processing container when the substrate processing fluid having the constant pressure is supplied from the constant pressure supply passage to the processing container and the internal pressure of the processing container becomes a predetermined pressure.
申请公布号 JP2013254906(A) 申请公布日期 2013.12.19
申请号 JP20120131031 申请日期 2012.06.08
申请人 TOKYO ELECTRON LTD 发明人 GOSHI GENTARO
分类号 H01L21/304;F26B5/16;H01L21/027 主分类号 H01L21/304
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