SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce variation in the wiring resistance of first wiring by reducing variation in the film thickness of the first wiring above a second active region.SOLUTION: A semiconductor device includes: a memory cell region having a first element isolation region and a first active region provided so as to be partitioned by the first element isolation region; a peripheral region having a second element isolation region and a second active region partitioned by the first and second element isolation regions and protruding to top surfaces of the first and second element isolation regions; and first wiring buried in a semiconductor substrate in the memory cell region and the peripheral region so as to extend in a first direction above the first and second active regions. The width of the second active region in the first direction is constant.