| 摘要 |
PROBLEM TO BE SOLVED: To substantially reduce influences by characteristic variations of a variable resistive element composing a memory cell of a semiconductor storage device to thereby improve the performance.SOLUTION: The semiconductor storage device has a memory cell 1 which includes two variable resistive elements 3 each having first and second electrodes, changing electric resistance between the first and second electrodes by applying voltage between the first and second electrodes, and storing information according to the changed electric resistance. When information is rewritten for the memory cell 1, either one of increase and decrease of the electric resistance is performed for the two variable resistive elements 3 composing the memory cell 1 by defining one of the first and second electrodes as reference and applying rewrite voltage of the same polarity to the other electrode for the two variable resistive elements 3. When information stored in the memory cell 1 is read out, the two variable resistive elements 3 composing the memory cell 1 are electrically connected in series with each other, and a series resistance state of the two series connected variable resistive elements 3 is detected. |
