发明名称 |
SEMICONDUCTOR DEVICE, SUPERLATTICE LAYER USED IN THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device includes a silicon substrate; a nitride nucleation layer disposed on the silicon substrate; at least one superlattice layer disposed on the nitride nucleation layer; and at least one gallium nitride-based semiconductor layer disposed on the superlattice layer. The at least one superlattice layer includes a stack of complex layers, each complex layer including a first layer and a second layer such that each of the complex layers has a plurality of nitride semiconductor layers having different compositions, at least one of the plurality of nitride semiconductor layers having a different thickness based on a location of the at least one nitride semiconductor layer within the stack, and at least one stress control layer having a thickness greater than a critical thickness for pseudomorphic growth. |
申请公布号 |
US2013334496(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313838963 |
申请日期 |
2013.03.15 |
申请人 |
KIM JAE-KYUN;KIM JUN-YOUN;TAK YOUNG-JO |
发明人 |
KIM JAE-KYUN;KIM JUN-YOUN;TAK YOUNG-JO |
分类号 |
H01L29/205;H01L21/02 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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