发明名称 |
METHOD OF FABRICATING OXIDE THIN FILM DEVICE USING LASER LIFT-OFF AND OXIDE THIN FILM DEVICE FABRICATED BY THE SAME |
摘要 |
Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed. |
申请公布号 |
US2013334522(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213713396 |
申请日期 |
2012.12.13 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KANG CHONG YUN;YOON SEOK JIN;DO YOUNG HO;CHOI JI WON;BAEK SEUNG HYUB;SONG HYUN CHEOL;KIM JIN SANG |
分类号 |
H01L21/02;H01L29/22 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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