发明名称 |
Programmable Resistance Memory with Feedback Control |
摘要 |
A programmable resistance memory employs a feedback control circuit to regulate the programming current supplied to a selected programmable resistance memory element. The programmable resistance memory may be a phase change memory. The feedback control circuit monitors and controls the characteristics of a current pulse employed to program a memory cell. |
申请公布号 |
US2013336054(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201313958538 |
申请日期 |
2013.08.03 |
申请人 |
PARKINSON WARD;OVONYX,INC. |
发明人 |
PARKINSON WARD |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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