发明名称 |
Methods and Apparatus for High Voltage Diodes |
摘要 |
High voltage diodes are disclosed. A semiconductor device is provided having a P well region; an N well region adjacent to the P well region and forming a p-n junction with the P well region; a P+ region forming an anode at the upper surface of the semiconductor substrate in the P well region; an N+ region forming a cathode at the upper surface of the semiconductor substrate in the N well region; and an isolation structure formed over the upper surface of the semiconductor substrate between the anode and the cathode and electrically isolating the anode and cathode including a first dielectric layer overlying a portion of the upper surface of the semiconductor substrate, and a second dielectric layer overlying a portion of the first dielectric layer and a portion of the upper surface of the semiconductor substrate. Methods for forming the devices are disclosed. |
申请公布号 |
US2013334648(A1) |
申请公布日期 |
2013.12.19 |
申请号 |
US201213524902 |
申请日期 |
2012.06.15 |
申请人 |
LIN WAN-YEN;CHANG YI-FENG;LEE JAM-WEM;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN WAN-YEN;CHANG YI-FENG;LEE JAM-WEM |
分类号 |
H01L29/861;H01L21/329 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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