发明名称 STITCH AND TRIM METHODS FOR DOUBLE PATTERNING COMPLIANT STANDARD CELL DESIGN
摘要 A method for creating double patterning compliant integrated circuit layouts is disclosed. The method allows patterns to be assigned to different masks and stitched together during lithography. The method also allows portions of the pattern to be removed after the process.
申请公布号 US2013339911(A1) 申请公布日期 2013.12.19
申请号 US201313970636 申请日期 2013.08.20
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSU CHIN-HSIUNG;CHEN HUANG-YU;WANG CHUNG-HSING
分类号 G06F17/50 主分类号 G06F17/50
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