| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM |
| 摘要 |
A nitride semiconductor light emitting element includes a light emitting layer. The light emitting layer includes an InxGa1-xN well layer (0<x@1) having a principal surface that is an m-plane. A profile in a depth direction (depth profile) of an In composition ratio x in the InxGa1-xN well layer has a plurality of peaks. Values of the In composition ratios x at the respective plurality of peaks are different from one another. |
| 申请公布号 |
US2013334986(A1) |
申请公布日期 |
2013.12.19 |
| 申请号 |
US201313974211 |
申请日期 |
2013.08.23 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
INOUE AKIRA;YOSHIDA SHUNJI;YOKOGAWA TOSHIYA |
| 分类号 |
H01L33/32;H05B33/08 |
主分类号 |
H01L33/32 |
| 代理机构 |
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代理人 |
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