IMPROVED METHOD FOR THE PREPARATION OF METALLURGICAL GRADE HIGH PURITY SILICON IN PARTICULAR FOR USE IN PHOTOVOLTAIC FIELD
摘要
<p>The present invention relates to a method for producing high purity metallurgic grade silicon, particularly for use in photovoltaic field, said method being characterized in that it provides the steps of: a. selecting high purity raw materials in powder and lump form; b. mixing raw material powder; c. briquetting mixed material; d. realizing batches of briquettes and lump material; e. carrying out carbon reduction within an alternate current (AC) submerged arc furnace (SAF); f. stocking product within SAF furnace basin; g. taking out the product; h. carrying out purification into an inducted ladle; i. settling, skimming and filtering carbide and oxide particles.</p>
申请公布号
WO2013042151(A9)
申请公布日期
2013.12.19
申请号
WO2012IT00247
申请日期
2012.08.08
申请人
N.E.D. SILICON S.P.A.;SHYTI, ARTAN;DELLA FORNACE, MASSIMO;PESARESI, MARIO
发明人
SHYTI, ARTAN;DELLA FORNACE, MASSIMO;PESARESI, MARIO