发明名称 IMPROVED METHOD FOR THE PREPARATION OF METALLURGICAL GRADE HIGH PURITY SILICON IN PARTICULAR FOR USE IN PHOTOVOLTAIC FIELD
摘要 <p>The present invention relates to a method for producing high purity metallurgic grade silicon, particularly for use in photovoltaic field, said method being characterized in that it provides the steps of: a. selecting high purity raw materials in powder and lump form; b. mixing raw material powder; c. briquetting mixed material; d. realizing batches of briquettes and lump material; e. carrying out carbon reduction within an alternate current (AC) submerged arc furnace (SAF); f. stocking product within SAF furnace basin; g. taking out the product; h. carrying out purification into an inducted ladle; i. settling, skimming and filtering carbide and oxide particles.</p>
申请公布号 WO2013042151(A9) 申请公布日期 2013.12.19
申请号 WO2012IT00247 申请日期 2012.08.08
申请人 N.E.D. SILICON S.P.A.;SHYTI, ARTAN;DELLA FORNACE, MASSIMO;PESARESI, MARIO 发明人 SHYTI, ARTAN;DELLA FORNACE, MASSIMO;PESARESI, MARIO
分类号 C01B33/025 主分类号 C01B33/025
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