Collecting device, used to sputter material during ion beam etching under vacuum, comprises ion beam sources arranged on each side of substrate to be etched, and surface areas, which reflect beam generated by ion source towards substrate

摘要

The collecting device comprises ion beam sources arranged on each side of a substrate to be etched, and surface areas, which reflect a beam generated by the ion source towards the substrate. A ratio of the areas is reduced. The collecting device further comprises parts, which are arranged parallel to each other and are aligned at a distance. The parts have a phase facing towards a side of the ion beam source.