PHOTO MASK AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a photo mask used in a photo lithography technology having an ArF excimer laser as an exposure light source and performing exposure by oblique incident light using a pupil filter, capable of reducing an influence of a three-dimensional effect of a photo mask pattern and increasing a pattern exposure tolerance of the photo mask, and also to provide a manufacturing method thereof.SOLUTION: The photo mask is a half tone mask 10 obtained by forming a mask pattern 16 through providing a semi-transparent film pattern 12 that transmits exposure light onto a transparent substrate 11 at a predetermined transmission ratio to change phases. A side wall part of the semi-transparent pattern 12 is covered with a side wall extinction film 15 that extinguishes the exposure light.