SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which prevents lowering of yield due to electrostatic discharge damage and is highly reliable.SOLUTION: The semiconductor device comprises: a gate electrode layer; a gate insulating layer on the gate electrode layer; an oxide insulating layer on the gate insulating layer; an oxide semiconductor layer which is in contact with the oxide insulating layer and overlaps the gate electrode layer; and a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer. The gate insulating layer is configured to include a silicon film containing nitrogen. The oxide insulating layer contains one or a plurality of metal elements selected from constituent elements of the oxide semiconductor layer. The film thickness of the gate insulating layer is greater than that of the oxide insulating layer.